Title:
センサ・デバイスおよびその製造方法
Document Type and Number:
Japanese Patent JP6286636
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce the size of a semiconductor sensor, and to enhance sensor sensitivity.SOLUTION: A deep groove is formed in a thickness direction of a substrate such as a semiconductor substrate. A thin plate is stuck to upper surfaces and/or lower surfaces of substrate sidewalls (partition wall) between a plurality of adjacent grooves. When a force amount such as a pressure, an acceleration, an angular velocity and sound waves is applied to the substrate sidewalls (partition wall), the substrate sidewalls (partition wall)(equivalent to diaphragm) between the respective grooves curve, and the capacity of the groove part changes. The force amount such as a pressure, an acceleration, an angular velocity and sound waves can be detected by detecting the amount of the change. The capacity increases by making the grooves deeper, and accordingly a sensor having a small area can be produced. The amount of the change of the substrate sidewalls (partition wall) increases by making the substrate sidewalls (partition wall) thin, and accordingly the sensor sensitivity enhances.
Inventors:
Shun Hosaka
Application Number:
JP2012161032A
Publication Date:
March 07, 2018
Filing Date:
July 19, 2012
Export Citation:
Assignee:
Shun Hosaka
International Classes:
H04R19/04; G01P15/125; H01L29/84; H01L41/08; H01L41/113; H02N2/18; H04R31/00
Domestic Patent References:
| JP2011238714A | ||||
| JP2010175482A | ||||
| JP2011004598A | ||||
| JP2011249673A | ||||
| JP2005183443A | ||||
| JP2002031148A | ||||
| JP2012124471A |
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