Title:
ＳｉＣエピタキシャル基板の製造方法、半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6289952
Kind Code:
B2
Inventors:
Joji Nishio
Chiharu Ota
Ryosuke Iijima
Tatsuo Shimizu
Takashi Shito
Chiharu Ota
Ryosuke Iijima
Tatsuo Shimizu
Takashi Shito
Application Number:
JP2014057277A
Publication Date:
March 07, 2018
Filing Date:
March 19, 2014
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/20; C23C16/42; H01L21/205; H01L21/329; H01L29/06; H01L29/161; H01L29/861; H01L29/868
Domestic Patent References:
| JP2007013154A | ||||
| JP2008053667A | ||||
| JP2001501162A | ||||
| JP2011236085A | ||||
| JP2015119083A |
Foreign References:
| WO2012026234A1 |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama
Akira Sudo
Mitsuyuki Matsuyama
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