Title:
窒化物半導体構造物
Document Type and Number:
Japanese Patent JP6371986
Kind Code:
B2
Abstract:
A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and comprising plural nitride semiconductor layers. The semiconductor substrate has, from a side thereof near the layer comprising the plural nitride semiconductor layers, a surface region and an internal region in this order. The surface region has a resistivity of 0.1 Ωcm or more, and the internal region has a resistivity of 1000 Ωcm or more.
Inventors:
Hidekazu Umeda
Masahiro Ishida
Tetsuzo Ueda
Daisuke Ueda
Masahiro Ishida
Tetsuzo Ueda
Daisuke Ueda
Application Number:
JP2017151283A
Publication Date:
August 15, 2018
Filing Date:
August 04, 2017
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/338; C30B25/02; C30B29/38; H01L21/337; H01L29/778; H01L29/808; H01L29/812; H01L29/861; H01L29/868
Domestic Patent References:
| JP2011040766A | ||||
| JP2010245504A | ||||
| JP2007273814A | ||||
| JP4237134A | ||||
| JP2001106594A | ||||
| JP2000219598A |
Attorney, Agent or Firm:
Kenji Kamada
Hiroo Maeda
Hiroo Maeda