半導体レーザ素子 - ソニー株式会社

Title:

半導体レーザ素子

Document Type and Number:

Japanese Patent JP6387968

Kind Code:

B2

Abstract:

A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.

Inventors:

Shinichi Wada
Dai Kuramoto
Hideki Watanabe

Application Number:

JP2015549063A

Publication Date:

September 12, 2018

Filing Date:

November 06, 2014

Export Citation:

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