Title:
抵抗変化型不揮発性記憶素子の製造方法
Document Type and Number:
Japanese Patent JP6391009
Kind Code:
B2
Abstract:
A resistive nonvolatile storage device includes a first interlayer insulating layer provided above a substrate, a contact hole penetrating through the first interlayer insulating layer, a contact layer wholly covering a bottom surface and a sidewall surface of the contact hole and extending to at least partially cover an upper surface of the first interlayer insulating layer, a contact plug filled in the contact hole, an upper surface of the contact plug being positioned below an upper surface of the contact layer, a lower electrode provided on both the contact plug and the contact layer that is provided on the part of the upper surface of the first interlayer insulating layer, and a resistance change layer provided on the lower electrode, and an upper electrode that is provided on the resistance change layer.
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Inventors:
Hayakawa Yukio
Yoshio Kawashima
Yoshio Kawashima
Application Number:
JP2014232103A
Publication Date:
September 19, 2018
Filing Date:
November 14, 2014
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/8239; H01L27/10; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2006269480A | ||||
| JP2006351614A | ||||
| JP2002289809A | ||||
| JP2008218855A |
Foreign References:
| WO2011024455A1 | ||||
| WO2013094169A1 |
Attorney, Agent or Firm:
Hiromori Arai
Eisaku Teratani
Shinichi Michisaka
Eisaku Teratani
Shinichi Michisaka