Title:
半導体ウエハ
Document Type and Number:
Japanese Patent JP6397460
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor wafer for obtaining a side face incident photodiode capable of detecting light of a comparatively short wavelength region.SOLUTION: A semiconductor wafer comprises: first conductivity type impurity added layers 7 each formed on a principal surface 1a side of each of a plurality of element formation regions 2; second conductivity type impurity added layers 9 each formed on the principal surface 1a side of each of the plurality of element formation regions 2; and electrodes 15, 17 which are formed on the principal surface 1a side of the semiconductor wafer and corresponding to impurity added layers 7, 9, respectively. The semiconductor wafer further comprises: grooves 11 each of which is formed at a boundary between neighboring element formation regions 2 out of the plurality of element formation regions 2 and extends from the principal surface 1a in a thickness direction of the semiconductor wafer, in which lateral faces 2a of the element formation regions are exposed on the grooves 11 and the lateral faces 2a of the element formation regions 2, which are exposed on the grooves 11 are etching surfaces; and insulation films 13 formed on the exposed lateral faces 2a of the element formation regions 2.SELECTED DRAWING: Figure 8
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Inventors:
Hiroshi Oguri
Ishikawa Yoshitaka
Akira Sakamoto
Taguchi Tomoya
Yoshiro Fujii
Ishikawa Yoshitaka
Akira Sakamoto
Taguchi Tomoya
Yoshiro Fujii
Application Number:
JP2016215991A
Publication Date:
September 26, 2018
Filing Date:
November 04, 2016
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/10
Domestic Patent References:
| JP10256589A | ||||
| JP2007207990A | ||||
| JP2009135342A | ||||
| JP2009212109A |
Foreign References:
| WO2004008548A1 | ||||
| US4210923 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Yoshiki Kuroki
Kenichi Shibayama