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Title:
メトロロジターゲットの設計方法、メトロロジターゲットを有する基板、オーバーレイの測定方法、およびデバイス製造方法
Document Type and Number:
Japanese Patent JP6408610
Kind Code:
B2
Abstract:
Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to π/2 or 3π/2.

Inventors:
Den Boev, Ally, Jeffrey
Batacharia, Kaustuv
Application Number:
JP2016571164A
Publication Date:
October 17, 2018
Filing Date:
August 01, 2014
Export Citation:
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Assignee:
AS M Netherlands B.V.
International Classes:
G03F9/00; G01B11/14
Domestic Patent References:
JP2014512101A
JP2006157023A
Foreign References:
WO2014062972A1
US7061615
Attorney, Agent or Firm:
Sakaki Morishita
Takeshi Aoki