Title:
プロセス均一性及び熱消散を改善するダミーＴＳＶ（スルーシリコンビア）
Document Type and Number:
Japanese Patent JP6412091
Kind Code:
B2
Abstract:
In a stack of chips which each include active circuit regions, a plurality of through-silicon via (TSV) structures are formed for thermally conducting heat from the multi-chip stack by patterning, etching and filling with thermally conductive material a plurality of TSV openings in the multi-chip stack, including a first larger TSV opening that extends through substantially the entirety of the multi-chip stack without penetrating any active circuit region, and a second smaller TSV opening that extends down to but not through an active circuit region.
Inventors:
Changyok Park
Application Number:
JP2016239334A
Publication Date:
October 24, 2018
Filing Date:
December 09, 2016
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INCORPORATED
International Classes:
H01L25/065; H01L25/07; H01L25/18
Domestic Patent References:
| JP2006245311A | ||||
| JP2000306998A |
Foreign References:
| US20090053858 |
Attorney, Agent or Firm:
Yuji Hayakawa
Ryota Sano
Keisuke Murasame
Ryota Sano
Keisuke Murasame