Title:
窒化物半導体テンプレートの製造方法
Document Type and Number:
Japanese Patent JP6415909
Kind Code:
B2
Abstract:
There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer to be thicker than a peak width of a projection and in a thickness of not less than 11 nm and not more than 400 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and growing and forming a nitride semiconductor layer on the buffer layer.
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Inventors:
Introduction to Fujikura
Application Number:
JP2014188709A
Publication Date:
October 31, 2018
Filing Date:
September 17, 2014
Export Citation:
Assignee:
Sumitomo Chemical Co., Ltd.
International Classes:
H01L21/205; C23C16/34; C30B25/18; C30B29/38; H01L21/203; H01L33/12; H01L33/22; H01L33/32
Domestic Patent References:
| JP2008078613A | ||||
| JP2012238895A |
Foreign References:
| WO2014136393A1 | ||||
| WO2011074534A1 | ||||
| WO2014057808A1 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Hiromi Abe
Hideo Tachibana
Masahiro Shiratori
Hiromi Abe
Hideo Tachibana
Masahiro Shiratori