Title:
過熱検出回路及び電源装置
Document Type and Number:
Japanese Patent JP6426018
Kind Code:
B2
Abstract:
Provided is an overheat detection circuit having a small circuit scale, low cost, and low electric power consumption. The overheat detection circuit implemented in a CMOS semiconductor device includes: a reference voltage circuit connected between a base and an emitter of a parasitic bipolar transistor; and a current detection circuit connected to the emitter of the parasitic bipolar transistor, in which the current detection circuit is configured to detect a flow of a current through the parasitic bipolar transistor to output an overheat detection signal.
Inventors:
Noriyuki Harada
Kaoru Sakaguchi
Kaoru Sakaguchi
Application Number:
JP2015019470A
Publication Date:
November 21, 2018
Filing Date:
February 03, 2015
Export Citation:
Assignee:
Abric Co., Ltd.
International Classes:
G05F3/22; G01K7/01
Domestic Patent References:
| JP2013037763A | ||||
| JP9229778A | ||||
| JP2012251917A |