Title:
マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP6430666
Kind Code:
B2
Abstract:
A mask blank for a phase shift mask having a phase shift film on a transparent substrate. The phase shift film generates a phase difference of 150 degrees or more and 200 degrees or less and transmits exposure light of an ArF excimer laser at a transmittance of 10% or more. The film has a low transmitting layer and a high transmitting layer, stacked alternately to form a total of six or more layers from a side of the transparent substrate. The low transmitting layer is made of a material containing silicon and nitrogen and having a nitrogen content of 50 atom % or more. The high transmitting layer is made of a material containing silicon and oxygen and having an oxygen content of 50 atom % or more. The low transmitting layer has a thickness greater than that of the high transmitting layer, which has a thickness of 4 nm or less.
Inventors:
Yasutaka Horigome
Taniguchi
Hiroshi Shishido
Taniguchi
Hiroshi Shishido
Application Number:
JP2017563153A
Publication Date:
November 28, 2018
Filing Date:
September 04, 2017
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/32; G03F1/48; G03F1/58; G03F1/74; G03F1/80
Domestic Patent References:
| JP2002535702A | ||||
| JP2015225182A | ||||
| JP2016018192A | ||||
| JP2014137388A | ||||
| JP2016021075A | ||||
| JP2015111246A | ||||
| JP2004062135A | ||||
| JP2016035559A |
Foreign References:
| WO2015141078A1 |
Attorney, Agent or Firm:
Yutaka Nagata
Takafumi Oshima
Tsukasa Ota
Takafumi Oshima
Tsukasa Ota