Title:
低ｋ誘電体膜をパターニングする方法
Document Type and Number:
Japanese Patent JP6457937
Kind Code:
B2
Abstract:
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
Inventors:
Nemani Snibus D
Pender Jeremiah Tea
Elephant King Jun
Le Bomilsky Dmitry
Belostott Ski Sergey G
Pender Jeremiah Tea
Elephant King Jun
Le Bomilsky Dmitry
Belostott Ski Sergey G
Application Number:
JP2015521634A
Publication Date:
January 23, 2019
Filing Date:
June 21, 2013
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/3065; H01L21/768; H01L23/532
Domestic Patent References:
| JP2006024730A | ||||
| JP4137532A | ||||
| JP2004152862A | ||||
| JP2001207277A | ||||
| JP2006286775A | ||||
| JP2009503889A |
Foreign References:
| WO2005095268A1 |
Attorney, Agent or Firm:
Yoshiaki Anzai