Title:
シリコン単結晶の製造方法
Document Type and Number:
Japanese Patent JP6459987
Kind Code:
B2
Inventors:
Satoshi Suzuki
Yoshihiro Kodama
Keiichi Nakazawa
Yoshihiro Kodama
Keiichi Nakazawa
Application Number:
JP2016002766A
Publication Date:
January 30, 2019
Filing Date:
January 08, 2016
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B13/12; C30B13/28
Domestic Patent References:
| JP2017105650A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi