Title:
横方向拡散金属酸化物半導体電界効果トランジスタ及びその製造方法
Document Type and Number:
Japanese Patent JP6464313
Kind Code:
B2
Abstract:
Provided are a laterally diffused metal oxide semiconductor field-effect transistor and a manufacturing method therefor. The method comprises: providing a wafer on which a first N well (22), a first P well (24) and a channel region shallow trench isolating structure (42) are formed; forming a high-temperature oxidation film on the surface of the wafer by deposition; photoetching and dryly etching the high-temperature oxidation film, and reserving a thin layer as an etching buffer layer; performing wet etching, removing the etching buffer layer in a region which is not covered by a photoresist, and forming a mini oxidation layer (52); performing photoetching and ion injection to form a second N well (32) in the first N well and form a second P well (34) in the first P well; forming a polysilicon gate (62) and a gate oxide layer on the surface of the wafer; and photoetching and injecting N-type ions to form a drain electrode (72) and a source electrode (74).
Inventors:
Yellow maple
Korea
Grandson
Forest peak
Zhao Ryuji
Hayashikado
Zhao
Korea
Grandson
Forest peak
Zhao Ryuji
Hayashikado
Zhao
Application Number:
JP2018503704A
Publication Date:
February 06, 2019
Filing Date:
January 29, 2016
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO., LTD.
International Classes:
H01L21/336; H01L29/78
Domestic Patent References:
| JP2014107302A | ||||
| JP2002176173A | ||||
| JP2001015741A | ||||
| JP2007533127A | ||||
| JP2013115144A | ||||
| JP2009528671A |
Attorney, Agent or Firm:
Cosmos International Patent and Trademark Office