Title:
半導体光素子、及びその製造方法
Document Type and Number:
Japanese Patent JP6487236
Kind Code:
B2
Inventors:
Chatan Ken
Kaoru Okamoto
Kaoru Okamoto
Application Number:
JP2015029676A
Publication Date:
March 20, 2019
Filing Date:
February 18, 2015
Export Citation:
Assignee:
Japan Oclaro Co., Ltd.
International Classes:
H01S5/343; G02F1/017
Domestic Patent References:
| JP2008235329A | ||||
| JP2014143327A | ||||
| JP2005217195A | ||||
| JP2007299882A | ||||
| JP11307457A | ||||
| JP2000077789A | ||||
| JP2008294444A | ||||
| JP2014110250A | ||||
| JP2002009400A | ||||
| JP2004179274A |
Foreign References:
| US5818861 | ||||
| US6148013 |
Other References:
MATSUMOTO S.,Low resistance 1.55 μm InGaAsP/InP semi-insulating buried heterostructure laser diodes using a multilayer contact structure,Electronics Letters,1995年 5月25日,Volume: 31, Issue: 11,Page(s): 882 - 883,DOI: 10.1049/el:19950604 https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=390928
PENG Lian,No-alloy ohmic contact to heavily carbon-doped GaAs,1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105),1998年10月23日,Pages: 681 - 684,DOI: 10.1109/ICSICT.1998.785982https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=785982
PENG Lian,No-alloy ohmic contact to heavily carbon-doped GaAs,1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105),1998年10月23日,Pages: 681 - 684,DOI: 10.1109/ICSICT.1998.785982https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=785982
Attorney, Agent or Firm:
Haruka International Patent Office