Title:
予備パターン化された底部電極及び酸化障壁上に強誘電体ランダムアクセスメモリを製造する方法
Document Type and Number:
Japanese Patent JP6510678
Kind Code:
B2
Abstract:
Structure and method of fabrication of F-RAM cells are described. The F-RAM cell include ferroelectric capacitors forming over and with a pre-patterned barrier structure which has a planarized/chemically and/or mechanically polished top surface. The pre-patterned barrier structure includes multiple oxygen barriers having a structure of a bottom electrode layer over an oxygen barrier layer. The bottom electrode layer forms at least a part of the bottom electrode of the ferroelectric capacitor formed thereon.
Inventors:
Shansung
Application Number:
JP2017562051A
Publication Date:
May 08, 2019
Filing Date:
July 18, 2016
Export Citation:
Assignee:
CYPRESS SEMICONDUCTOR CORP.
International Classes:
H01L27/11507
Domestic Patent References:
| JP2010192620A | ||||
| JP2010192631A | ||||
| JP2007053309A | ||||
| JP2005044972A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Yuki Suzuki
Mitsutsugu Sugimura
Yuki Suzuki