Title:
化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
Document Type and Number:
Japanese Patent JP6515831
Kind Code:
B2
Abstract:
A resist composition comprising a resin adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium or iodonium salt of nitrogen-containing carboxylic acid has a high resolution. By lithography, a pattern with minimal LER can be formed.
Inventors:
Masatake Kotake
Takayuki Fujiwara
Keiichi Masunaga
General Domon
Satoshi Watanabe
Takayuki Fujiwara
Keiichi Masunaga
General Domon
Satoshi Watanabe
Application Number:
JP2016015146A
Publication Date:
May 22, 2019
Filing Date:
January 29, 2016
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/004; C08F212/14; C08F220/24; C08F220/26; C08F220/28; C08F220/30; G03F7/039
Domestic Patent References:
| JP2013092598A | ||||
| JP2008013705A |
Attorney, Agent or Firm:
Hideaki International Patent Office