半導体レーザ装置 - LandMark Optoelectronics Corporation

Title:

半導体レーザ装置

Document Type and Number:

Japanese Patent JP6517902

Kind Code:

B2

Abstract:

A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

Inventors:

Daegu Shui
Ma Eiji
Forest vine

Application Number:

JP2017202814A

Publication Date:

May 22, 2019

Filing Date:

October 19, 2017

Export Citation:

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