Title:
被処理体を処理する方法
Document Type and Number:
Japanese Patent JP6537473
Kind Code:
B2
Abstract:
To provide a method for achieving the highly accurate minimum line width control the stable minimum line width reproducibility, etc. in pattern formation on a workpiece. A method for processing a workpiece comprises: a formation step for forming a silicon oxide film in a process chamber by repeatedly executing a sequence including a first step for supplying a first gas containing an aminosilane-based gas into the process chamber of a plasma processing device, a second step for purging space in the process chamber after execution of the first step, a third step for producing plasma of a second gas containing an oxygen gas in the process chamber after execution of the second step and a fourth step for purging the space in the process chamber after the execution of the third step; a preparation step to be performed before loading the workpiece into the process chamber; and a processing step for performing an etching process on the workpiece loaded in the process chamber. The preparation step is performed before the processing step. The formation step is executed in the preparation step and the processing step. In the first step, plasma of the first gas is not produced.
Inventors:
Yoshihide Kihara
Tohru Hisamatsu
Masanobu Honda
Tomoyuki Oishi
Tohru Hisamatsu
Masanobu Honda
Tomoyuki Oishi
Application Number:
JP2016101357A
Publication Date:
July 03, 2019
Filing Date:
May 20, 2016
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; G03F7/40; H05H1/46
Domestic Patent References:
| JP2011216817A | ||||
| JP2007294905A | ||||
| JP2014138027A | ||||
| JP2009033073A | ||||
| JP2016207915A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka