Title:
半導体装置
Document Type and Number:
Japanese Patent JP6538211
Kind Code:
B2
Abstract:
A semiconductor device capable of maintaining data during instantaneous power reduction or interruption. The semiconductor device includes first to sixth transistors. The first and fourth transistors are p-channel transistors. The second and fifth transistors are n-channel transistors. In the third and sixth transistors, an oxide semiconductor layer includes a channel formation region. A high voltage is applied to one of a source and a drain of the first transistor and one of a source and a drain of the fourth transistor. A low voltage is applied to one of a source and a drain of the second transistor and one of a source and a drain of the fifth transistor.
Inventors:
Takanori Matsuzaki
Application Number:
JP2018008729A
Publication Date:
July 03, 2019
Filing Date:
January 23, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K3/356; H01L29/786
Domestic Patent References:
| JP20139297A | ||||
| JP2007150761A | ||||
| JP200667559A | ||||
| JP2006500702A | ||||
| JP2002135109A | ||||
| JP2002118458A | ||||
| JP6150660A |