Title:
半導体装置
Document Type and Number:
Japanese Patent JP6546321
Kind Code:
B2
Abstract:
Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.
Inventors:
Noritaka Ishihara
Masashi Ota
Masashi Tsubuki
Masami Nagasawa
Gyoutoku Shima
Junichi Koizuka
Yasushi Hosaka
Shunpei Yamazaki
Masashi Ota
Masashi Tsubuki
Masami Nagasawa
Gyoutoku Shima
Junichi Koizuka
Yasushi Hosaka
Shunpei Yamazaki
Application Number:
JP2018124116A
Publication Date:
July 17, 2019
Filing Date:
June 29, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H05B44/00
Domestic Patent References:
| JP2012059860A | ||||
| JP2010073881A | ||||
| JP2013004958A | ||||
| JP2013179290A | ||||
| JP2012084860A | ||||
| JP2011135061A |
Foreign References:
| US20120319112 | ||||
| US20130207111 |