Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP6556601
Kind Code:
B2
Abstract:
To provide a semiconductor device having improved performance. A method of manufacturing the semiconductor device includes forming, after formation of a control gate electrode and a memory gate electrode, a conductive film on an insulating film made of a high-dielectric-constant film via a metal film; patterning the conductive film and thereby forming a gate electrode including the metal film and the conductive film in a high-voltage MISFET region, while forming a metal film portion and a conductive film portion in a low-voltage MISFET region; and then, removing the conductive film portion from the low-voltage MISFET region, forming another conductive film on the metal film portion, and forming a gate electrode including the metal film portion and the another conductive film.
Inventors:
Ogata complete
Application Number:
JP2015221671A
Publication Date:
August 07, 2019
Filing Date:
November 11, 2015
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L27/11573; H01L21/336; H01L27/10; H01L27/11546; H01L27/11575; H01L29/788; H01L29/792
Domestic Patent References:
| JP2014204041A | ||||
| JP2014165299A | ||||
| JP2010287782A | ||||
| JP2014154789A | ||||
| JP2007109800A |
Attorney, Agent or Firm:
Tsutsui International Patent Office