Title:
半導体デバイス、太陽電池、太陽電池モジュール、及び組成物
Document Type and Number:
Japanese Patent JP6562398
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the durability of a semiconductor device.SOLUTION: A photoelectric conversion element 100 includes a layer structure in which a substrate 107, a cathode (electrode) 101, an electron extraction layer (buffer layer) 102, an active layer 103, a hole extraction layer (buffer layer) 104, a work function tuning layer 105, and an anode (electrode) 106 are formed in this order. The active layer 103 includes a semiconductor compound and an insulating polymer. The work function tuning layer may exist between the cathode 101 and electron extraction layer 102.SELECTED DRAWING: Figure 3
Inventors:
Eiichi Nakamura
Sato Satoshi
Guo Unryu
Sato Satoshi
Guo Unryu
Application Number:
JP2015190311A
Publication Date:
August 21, 2019
Filing Date:
September 28, 2015
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
National University Corporation Tokyo University
National University Corporation Tokyo University
International Classes:
H01L29/786; H01L51/44; H01L51/46
Domestic Patent References:
| JP2009260340A | ||||
| JP2011508967A | ||||
| JP2014194878A | ||||
| JP2015029091A | ||||
| JP2014027175A | ||||
| JP2014011054A | ||||
| JP2003502874A |
Foreign References:
| WO2014136953A1 | ||||
| WO2012067124A1 |
Attorney, Agent or Firm:
Yasunori Otsuka
Yasuhiro Otsuka
Shiro Takayanagi
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
Satoshi Kinoshita
Yasuhiro Otsuka
Shiro Takayanagi
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
Satoshi Kinoshita