Title:
切り替えコンポーネントおよびメモリユニット
Document Type and Number:
Japanese Patent JP6577954
Kind Code:
B2
Abstract:
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include a memory unit which includes a memory cell and a select device electrically coupled to the memory cell. The select device has a selector region between a pair of electrodes. The selector region contains semiconductor doped with one or more of nitrogen, oxygen, germanium and carbon. The select device has current versus voltage characteristics which include snap-back voltage behavior.
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Inventors:
Ramas Wami, Drai Vishak Nirmal
Application Number:
JP2016552508A
Publication Date:
September 18, 2019
Filing Date:
November 18, 2014
Export Citation:
Assignee:
Micron Technology, Ink.
International Classes:
H01L21/8239; H01L21/28; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2011171683A | ||||
| JP2011249542A |
Foreign References:
| WO2011114666A1 | ||||
| US20100091561 |
Attorney, Agent or Firm:
Yoshiyuki Osuga
Nomura Yasuhisa
Nomura Yasuhisa