Title:
ＭＥＭＳ圧力センサとＭＥＭＳ慣性センサの集積構造
Document Type and Number:
Japanese Patent JP6580804
Kind Code:
B2
Abstract:
The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.
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Inventors:
Chen Quo An
Application Number:
JP2019038245A
Publication Date:
September 25, 2019
Filing Date:
March 04, 2019
Export Citation:
Assignee:
Goltech Ink
International Classes:
G01L9/00; G01P15/08; G01P15/125
Domestic Patent References:
| JP2001235381A | ||||
| JP7007162A | ||||
| JP2015077677A | ||||
| JP2007064920A | ||||
| JP2008140867A | ||||
| JP2014521071A | ||||
| JP2013011587A |
Foreign References:
| US20130340525 | ||||
| CN103708409A | ||||
| US20120043627 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Kato Kazunori