Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP6581243
Kind Code:
B2
Abstract:
An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
Inventors:
Junichiro Sakata
Toshige Sasaki
Miyuki Hosaba
Toshige Sasaki
Miyuki Hosaba
Application Number:
JP2018089808A
Publication Date:
September 25, 2019
Filing Date:
May 08, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| JP2008098637A | ||||
| JP2008281988A | ||||
| JP2001332734A | ||||
| JP2003077832A |
Foreign References:
| WO2008096768A1 |