Title:
ＳｉＣ単結晶シード、ＳｉＣインゴット、ＳｉＣ単結晶シードの製造方法及びＳｉＣ単結晶インゴットの製造方法
Document Type and Number:
Japanese Patent JP6583989
Kind Code:
B2
Abstract:
A SiC single crystal seed of the present invention has a main surface with an offset angle of at least 2° but not more than 20° relative to the {0001} plane, and at least one sub-growth surface, wherein the sub-growth surface includes an initial facet formation surface that is on the offset upstream side of the main surface and has an inclination angle θ relative to the {0001} plane with an absolute value of less than 2° in any direction, and the initial facet formation surface has a screw dislocation starting point.
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Inventors:
Furuya Yuki
Tomohiro Shonai
Yasushi Urakami
Gunjijima
Tomohiro Shonai
Yasushi Urakami
Gunjijima
Application Number:
JP2015086810A
Publication Date:
October 02, 2019
Filing Date:
April 21, 2015
Export Citation:
Assignee:
昭和電工株式会社
株式会社デンソー
株式会社豊田中央研究所
株式会社デンソー
株式会社豊田中央研究所
International Classes:
C30B29/36; C30B33/00
Domestic Patent References:
| JP2015048259A | ||||
| JP2012046377A |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Masatake Shiga
Suzuki Mitsuyoshi
Osamu Mikuni
Norihiko Ara
Tomoo Katsumata
Masatake Shiga
Suzuki Mitsuyoshi
Osamu Mikuni