Title:
磁気抵抗効果素子及び磁気抵抗効果素子の製造方法
Document Type and Number:
Japanese Patent JP6586872
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect device with a small sheet resistance.SOLUTION: A magnetoresistive effect device according to an embodiment of the present invention comprises: a first ferromagnetic metal layer; a second ferromagnetic metal layer; and a tunnel barrier layer held between the first and second ferromagnetic metal layers. The tunnel barrier layer includes a non-magnetic oxide having a crystal structure of cubic crystal expressed by the composition formula AA'O (where A is a divalent cation, and A' is a monovalent cation). The space group of the crystal structure is any group selected from a group consisting of Pm3 m, I-43 m and Pm-3 m. In the basic lattice of the crystal structure, the number of the A ions is larger than the number of the A' ions.SELECTED DRAWING: Figure 1
Inventors:
Tomo Sasaki
Application Number:
JP2015242411A
Publication Date:
October 09, 2019
Filing Date:
December 11, 2015
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01L43/10
Domestic Patent References:
| JP2013197345A | ||||
| JP2006286157A | ||||
| JP2008098523A | ||||
| JP2013175615A |
Attorney, Agent or Firm:
Sumio Tanai
Norihiko Ara
Masato Iida
Akihiro Ogino
Norihiko Ara
Masato Iida
Akihiro Ogino