Title:
ｎ型シリコン半導体を使用した太陽電池モジュールのＰＩＤ対策太陽電池モジュール
Document Type and Number:
Japanese Patent JP6608189
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a PID-countermeasure film for a solar cell which is excellent in barrier properties of alkali metal ions emitted from cover glass of a solar cell module, and is excellent in heat resistance and light resistance, and to provide a PID-countermeasure solar cell module using the same.SOLUTION: There is provided a solar cell module 100 having a super/straight structure which has cover glass 11, a sealing film 18, a cyclic olefin-based resin film 14, an n-type silicon cell 15, and a back sheet 12, where power generation performance after a voltage of -1,000 V has been applied between the whole surface of the cover glass 11 and a series circuit of the n-type silicon cell 15 for 1,000 hours is kept to a value before the voltage is applied, which is 98% or more.SELECTED DRAWING: Figure 1
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Inventors:
Hideyoshi Nakahama
Takashi Yasushi
Hajime Serizawa
Kunimoto Rise
Takashi Yasushi
Hajime Serizawa
Kunimoto Rise
Application Number:
JP2015125540A
Publication Date:
November 20, 2019
Filing Date:
June 23, 2015
Export Citation:
Assignee:
Nisshinbo Mechatronics Co., Ltd.
International Classes:
H01L31/048
Domestic Patent References:
| JP2014157874A | ||||
| JP2014527299A |
Foreign References:
| WO2013128861A1 | ||||
| WO2014179140A2 | ||||
| US20140345674 | ||||
| CN204230263U |
Attorney, Agent or Firm:
Takayoshi Kokubun