Title:
パターン形成方法
Document Type and Number:
Japanese Patent JP6608907
Kind Code:
B2
Abstract:
Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.
Inventors:
Kevin Lowell
Gong Liu
Chen by Sue
Arwinder kerr
Chisen Hou
Minki Lee
Gong Liu
Chen by Sue
Arwinder kerr
Chisen Hou
Minki Lee
Application Number:
JP2017247190A
Publication Date:
November 20, 2019
Filing Date:
December 25, 2017
Export Citation:
Assignee:
Rohm and Haas Electronic Materials LLC
International Classes:
G03F7/40
Domestic Patent References:
| JP2017219763A | ||||
| JP2015127796A | ||||
| JP2008107788A | ||||
| JP2015187633A | ||||
| JP2016128902A | ||||
| JP2016006493A | ||||
| JP2004087900A |
Foreign References:
| US20110275020 |
Attorney, Agent or Firm:
Patent Business Corporation Sender International Patent Office