Title:
エピタキシャルシリコンウェーハの製造方法
Document Type and Number:
Japanese Patent JP6610056
Kind Code:
B2
Abstract:
A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm3) and an initial oxygen concentration X (×1017 atoms/cm3) satisfy the expression X≤−4.3×10−19Y+16.3.
Inventors:
Toroshie Osho
Toshiaki Ono
Toshiaki Ono
Application Number:
JP2015148558A
Publication Date:
November 27, 2019
Filing Date:
July 28, 2015
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06
Domestic Patent References:
| JP2006040972A | ||||
| JP2010083712A | ||||
| JP2008115050A | ||||
| JP2010228924A | ||||
| JP2007145692A | ||||
| JP2011021898A | ||||
| JP2001274167A |
Foreign References:
| WO2014041736A1 |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Yasuyuki Kurose
Ogata Japanese
Yasuyuki Kurose