Title:
半導体シリコンウェーハの表面欠陥検査方法
Document Type and Number:
Japanese Patent JP6610443
Kind Code:
B2
Inventors:
Tatsuo Abe
Kensaku Igarashi
Kensaku Igarashi
Application Number:
JP2016113602A
Publication Date:
November 27, 2019
Filing Date:
June 07, 2016
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
G01N21/956; H01L21/66
Domestic Patent References:
| JP2006073902A | ||||
| JP2004343013A | ||||
| JP2015220284A | ||||
| JP2002228596A | ||||
| JP2013101143A | ||||
| JP11126810A | ||||
| JP2003270169A | ||||
| JP11087449A | ||||
| JP2014116488A | ||||
| JP2006013102A |
Foreign References:
| US20070105247 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi