Title:
半導体装置
Document Type and Number:
Japanese Patent JP6619074
Kind Code:
B2
Abstract:
Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.
More Like This:
Inventors:
Tetsuhiro Tanaka
Toshihiko Takeuchi
Yamane Yasumasa
Toshihiko Takeuchi
Yamane Yasumasa
Application Number:
JP2018232343A
Publication Date:
December 11, 2019
Filing Date:
December 12, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/8234; H01L21/8238; H01L21/8242; H01L27/06; H01L27/088; H01L27/092; H01L27/108
Domestic Patent References:
| JP2011228689A | ||||
| JP2006173580A | ||||
| JP2011071476A | ||||
| JP2011044575A | ||||
| JP2012134475A | ||||
| JP2013153160A | ||||
| JP2011524627A | ||||
| JP2010508560A | ||||
| JP2004022991A |
Foreign References:
| US20110240991 | ||||
| US20060113539 | ||||
| CN101057338A | ||||
| KR1020070085828A | ||||
| US20110042667 | ||||
| US20120138922 | ||||
| US20130164899 | ||||
| CN103187262A | ||||
| KR1020130075671A | ||||
| WO2009120169A1 | ||||
| US20110045406 |