Title:
１３族窒化物単結晶の製造方法、および１３族窒化物単結晶の製造装置
Document Type and Number:
Japanese Patent JP6621615
Kind Code:
B2
Abstract:
A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.
Inventors:
Takashi Sato
Naoya Miyoshi
Junichi Wada
Masahiro Hayashi
Shoji Sarayama
Haruo Sunagawa
Yujiro Ishihara
Akira Usui
Naoya Miyoshi
Junichi Wada
Masahiro Hayashi
Shoji Sarayama
Haruo Sunagawa
Yujiro Ishihara
Akira Usui
Application Number:
JP2015158489A
Publication Date:
December 18, 2019
Filing Date:
August 10, 2015
Export Citation:
Assignee:
SIOX Co., Ltd.
Furukawa Metal Co., Ltd.
Furukawa Metal Co., Ltd.
International Classes:
C30B29/38
Domestic Patent References:
| JP2009221041A |
Foreign References:
| WO2014192904A1 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Hideo Tachibana
Hideo Tachibana