Title:
円柱形領域をもつ縦型トランジスタ装置構造
Document Type and Number:
Japanese Patent JP6624778
Kind Code:
B2
Abstract:
A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of cylindrically-shaped dielectric regions disposed in the semiconductor layer. The cylindrically-shaped dielectric regions extend in a vertical direction from a top surface of the semiconductor layer downward. Adjacent ones of the cylindrically-shaped dielectric regions being laterally separated along a common diametrical axis by a narrow region of the semiconductor layer having a first width. Each dielectric region having a cylindrically-shape comprises a conductive field plate member centrally disposed therein. The cylindrically-shaped, conductive field plate member extends in the vertical direction from the top surface downward to near a bottom of the dielectric region. The dielectric region laterally separates the cylindrically-shaped, conductive field plate member from the narrow region. A source region is disposed at the top surface, and a drain region is disposed at the bottom, of the semiconductor layer.
Inventors:
Sorin Stefan Joe Jesque
Wayne Bryan Grabowski
Kamal Large Varada Rajan
Lin Zoo
Kuo-chan Robert Yang
Wayne Bryan Grabowski
Kamal Large Varada Rajan
Lin Zoo
Kuo-chan Robert Yang
Application Number:
JP2014248620A
Publication Date:
December 25, 2019
Filing Date:
December 09, 2014
Export Citation:
Assignee:
Power Integrations Incorporated
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/41
Domestic Patent References:
| JP2002083963A | ||||
| JP2010516058A | ||||
| JP2013080984A |
Foreign References:
| US20130137230 |
Attorney, Agent or Firm:
Masahiro Abe
Satoshi Tachihara
Satoshi Tachihara