Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6629252
Kind Code:
B2
Abstract:
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a trench and exposing a portion of a first film at a bottom portion of the trench by removing a portion of a second film by performing dry etching using a gas including a first element. The second film is provided on the first film. The first film includes Alx1Ga1-x1N (0≤x1<1). The second film includes Alx2Ga1-x2N (0
Inventors:
Uesugi Kenjiro
Shindome
Daito Kato
Kuraguchi Masahiko
Shinya Nunogami
Shindome
Daito Kato
Kuraguchi Masahiko
Shinya Nunogami
Application Number:
JP2017017048A
Publication Date:
January 15, 2020
Filing Date:
February 01, 2017
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/338; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JP2015103780A | ||||
| JP2008227356A | ||||
| JP2014225606A | ||||
| JP2012023213A |
Foreign References:
| WO2014057906A1 |
Attorney, Agent or Firm:
Masahiko Hinataji