Title:
酸化物半導体膜
Document Type and Number:
Japanese Patent JP6629509
Kind Code:
B2
Abstract:
Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.
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Inventors:
Akihisa Shimomura
Yamane Yasumasa
Yuhei Sato
Takahisa Ishiyama
Kenichi Okazaki
Chiho Kawanabe
Masashi Ota
Noritaka Ishihara
Yamane Yasumasa
Yuhei Sato
Takahisa Ishiyama
Kenichi Okazaki
Chiho Kawanabe
Masashi Ota
Noritaka Ishihara
Application Number:
JP2015028756A
Publication Date:
January 15, 2020
Filing Date:
February 17, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C30B29/22; C23C14/08; C30B23/08; H01L21/20; H01L21/265; H01L21/28; H01L21/336; H01L21/365; H01L21/425; H01L21/8234; H01L21/8239; H01L21/8242; H01L21/8244; H01L27/06; H01L27/088; H01L27/105; H01L27/108; H01L27/11; H01L29/786
Domestic Patent References:
| JP2013201429A | ||||
| JP2014007399A | ||||
| JP2008163441A |
Foreign References:
| WO2007055377A1 |