Title:
半導体装置
Document Type and Number:
Japanese Patent JP6634486
Kind Code:
B2
Abstract:
Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low.
Inventors:
Kei Takahashi
Jun Koyama
Masato Ishii
Jun Koyama
Masato Ishii
Application Number:
JP2018154003A
Publication Date:
January 22, 2020
Filing Date:
August 20, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/28; H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H01L29/41; H01L29/417; H02M3/00
Domestic Patent References:
JP2006286772A | ||||
JP2010123938A | ||||
JP2010153828A | ||||
JP2002064195A | ||||
JP2005049832A | ||||
JP2000298289A |
Foreign References:
WO2010058746A1 | ||||
WO2007097068A1 | ||||
US20100102313 | ||||
US20100301326 |