Title:
無塩素の共形ＳｉＮ膜を蒸着させるための方法
Document Type and Number:
Japanese Patent JP6635640
Kind Code:
B2
Abstract:
Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor. In some embodiments, the methods involve chemical vapor deposition (CVD).
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Inventors:
Dennis Hausman
John Henry
Bert van Shulabenzic
Yswar Srinivasan
John Henry
Bert van Shulabenzic
Yswar Srinivasan
Application Number:
JP2013007612A
Publication Date:
January 29, 2020
Filing Date:
January 18, 2013
Export Citation:
Assignee:
NOVELLUS SYSTEMS INCORPORATED
International Classes:
H01L21/318; C23C16/42; C23C16/505
Domestic Patent References:
| JP2006060091A | ||||
| JP2005210076A | ||||
| JP2010283388A |
Foreign References:
| US20110256734 | ||||
| US20110086516 |
Attorney, Agent or Firm:
Meisei International Patent Office