Title:
コンタクト電極およびその形成方法
Document Type and Number:
Japanese Patent JP6647556
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a new structure of a contact electrode which works for both a p-type organic semiconductor layer and an n-type organic semiconductor layer as the contact electrode, and also to provide a method for forming the same.SOLUTION: A contact electrode has a structure composed of a first metal body arranged on an organic semiconductor layer 5 and a second metal layer. The first metal body has a meshed structure in which nano-particles of the first metal body reduced and precipitated in advance occupy an area ratio of 30% to 70% on the organic semiconductor layer 5. The second metal layer is a covered layer reduced and precipitated on the first metal body and the organic semiconductor layer 5.SELECTED DRAWING: Figure 1
Inventors:
Junichi Takeya
Mayumi Uno
Masahiro Ito
Mayumi Uno
Masahiro Ito
Application Number:
JP2015032473A
Publication Date:
February 14, 2020
Filing Date:
February 23, 2015
Export Citation:
Assignee:
National University Corporation Tokyo University
Japan Electro Plated Engineering Co., Ltd.
Japan Electro Plated Engineering Co., Ltd.
International Classes:
H01L21/336; H01L21/28; H01L21/288; H01L29/786; H01L51/05; H01L51/40
Domestic Patent References:
| JP2006005041A | ||||
| JP5649150B1 | ||||
| JP2014205905A | ||||
| JP2008266689A |
Foreign References:
| WO2007015350A1 |
Attorney, Agent or Firm:
Satoru Miyazaki
Keiji Goto
Funakoshi Takuko
Keiji Goto
Funakoshi Takuko