Title:
半導体装置
Document Type and Number:
Japanese Patent JP6648544
Kind Code:
B2
Abstract:
A semiconductor device includes: a semiconductor substrate through which a via hole is formed from a back surface to a front surface of the semiconductor substrate; an electrode provided on the front surface of the semiconductor substrate and closing the via hole; and a metal film provided on the back surface of the semiconductor substrate, a side wall of the via hole and a lower surface of the electrode, wherein an opening is provided in the metal film on the back surface of the semiconductor substrate, and the opening abuts on only part of a circumference of the via hole.
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Inventors:
Koichiro Hori
Koichiro Nishizawa
Koichiro Nishizawa
Application Number:
JP2016021641A
Publication Date:
February 14, 2020
Filing Date:
February 08, 2016
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
| JP61263284A | ||||
| JP2010171377A | ||||
| JP2008041790A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno