Title:
半導体装置
Document Type and Number:
Japanese Patent JP6651282
Kind Code:
B2
Abstract:
A signal processing device is produced. The signal processing device including a first transistor with high off-state resistance, a second transistor which controls conduction between two different nodes, a capacitor which holds electric charge, and a current control element such as a transistor or a resistor. The first node to which a gate of the second transistor and a second electrode of the current control element are connected, and the second node to which one of a source and a drain of the first transistor, a first electrode of the capacitor, and a first electrode of the current control element are connected. The capacitance (including a parasitic capacitance) of the second node is greater than ten times the capacitance (including a parasitic capacitance) of the first node. The capacitance does not affect the first node; thus, a boosting effect is large and charge retention characteristics are favorable.
Inventors:
Yasuhiko Takemura
Application Number:
JP2014103005A
Publication Date:
February 19, 2020
Filing Date:
May 19, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K19/177
Domestic Patent References:
| JP2011103453A | ||||
| JP8508149A | ||||
| JP2012186797A |