Title:
太陽電池及びその製造方法
Document Type and Number:
Japanese Patent JP6687321
Kind Code:
B2
Abstract:
A solar cell and a method for manufacturing the same are discussed. The method for manufacturing the solar cell includes forming an amorphous silicon layer on a back surface of a crystalline semiconductor substrate containing impurities of a first conductive type, performing a first diffusion process for diffusing impurities of a second conductive type opposite the first conductive type into a portion of the amorphous silicon layer to form an emitter region, and performing a second diffusion process for diffusing impurities of the first conductive type into a remaining portion except the portion of the amorphous silicon layer having the impurities of the second conductive type to form a back surface field region. When at least one of the first diffusion process and the second diffusion process is performed, the amorphous silicon layer is crystallized to form a silicon layer.
Inventors:
Liyutin
Chikunsun
Listening
Ansewon
Chikunsun
Listening
Ansewon
Application Number:
JP2015005864A
Publication Date:
April 22, 2020
Filing Date:
January 15, 2015
Export Citation:
Assignee:
LG ELECTRONICS INC.
International Classes:
H01L31/0747; H01L21/20; H01L21/22; H01L21/225
Domestic Patent References:
| JP2014504003A | ||||
| JP8078710A | ||||
| JP2013538009A | ||||
| JP2002268576A | ||||
| JP2012511258A | ||||
| JP2013118351A |
Foreign References:
| WO2013141917A1 | ||||
| WO2013038768A1 | ||||
| US7468485 | ||||
| US20120042945 | ||||
| WO2012127769A1 | ||||
| WO2014014113A1 |
Attorney, Agent or Firm:
Atsushi Aoki
Jun Tsuruta
Tomohiro Minamiyama
Akira Kawai
Kenichi Nakamura
Jun Tsuruta
Tomohiro Minamiyama
Akira Kawai
Kenichi Nakamura