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Title:
高純度バナジウム電解液の製造システム及び方法
Document Type and Number:
Japanese Patent JP6704459
Kind Code:
B2
Abstract:
The present invention discloses a system and method for preparing a high-purity vanadium electrolyte, comprising preparing a low-valence vanadium oxide with vanadium oxytrichloride as a raw material by ammonium salt precipitation and fluidization reduction, and preparing the high-purity vanadium electrolyte at a low temperature by adding a sulfuric acid solution and clean water under the conditions of ultrasound-assisted dissolution and activation. Efficient utilization of heat is achieved through heat exchange between the ammonium salt and the reduction tail gas and heat exchange between the reduction product and fluidized nitrogen gas. Ammonia gas in the reduction tail gas is recovered for precipitation of vanadium to achieve the recycling of ammonia gas. An internal member is arranged in the reduction fluidized bed to realize the precise regulation of the valence state of the reduction product. Furthermore, ultrasound-assisted dissolution and activation are employed to prepare the vanadium electrolyte at a low temperature, thereby improving the activity of the electrolyte. The system and method have the advantages of short process, high efficiency and good cleanliness, stable product quality, etc. and is applicable to large-scale industrial production.

Inventors:
Zhu, Jinshan
Yang, Hai Tao
Fan, chen lin
Mu, Wen Hong
Liu, Givin
Wan, Kuha
Van, chishung
Application Number:
JP2018539346A
Publication Date:
June 03, 2020
Filing Date:
January 16, 2017
Export Citation:
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Assignee:
INSTITUTE OF PROCESS ENGINEERING, CHINESE ACADEMY OF SCIENCES
BEIJING ZHONGKAIHONGDE TECHNOLOGY CO., LTD
International Classes:
H01M8/18; C01G31/00
Foreign References:
CN101880059A
CN103401010A
Other References:
ROBERT E. McCARLEY, JAMES W.RODDY,THE PREPARATION OF HIGH PURITY VANADIUM PENTOXIDE BY A CHLORINATIOn PROCEDURE,JOURNAL OF THE LESS-COMMON METALS,NE,1960年,2,29-35
Attorney, Agent or Firm:
Shoichi Okuyama
Moriaki Ogawa
Haruyuki Nishiyama
Mitsuji Sekiya
Matsushima Tetsuo
Arihara Koichi