Title:
光電変換装置およびその製造方法
Document Type and Number:
Japanese Patent JP6712605
Kind Code:
B2
Abstract:
A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and forming a separation groove that separates the electrode layer.
Inventors:
Katsunori Konishi
Yoshikawa Shota
Kawasakizaki Hayato
Kunihiro Nakano
Yoshikawa Shota
Kawasakizaki Hayato
Kunihiro Nakano
Application Number:
JP2017554952A
Publication Date:
June 24, 2020
Filing Date:
October 03, 2016
Export Citation:
Assignee:
Kaneka Corporation
International Classes:
H01L31/0747
Domestic Patent References:
| JP2013131586A |
Foreign References:
| WO2011105554A1 |
Attorney, Agent or Firm:
Masato Shintaku
Yoshimoto Riki
Yoshimoto Riki