Title:
剥離方法
Document Type and Number:
Japanese Patent JP6725720
Kind Code:
B2
Abstract:
The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.
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Inventors:
Seiji Homoto
Masataka Sato
Tomoya Aoyama
Ritsu Komatsu
Masataka Sato
Tomoya Aoyama
Ritsu Komatsu
Application Number:
JP2019075437A
Publication Date:
July 22, 2020
Filing Date:
April 11, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/02; G02F1/1368; H01L21/336; H01L27/12; H01L29/786; H01L51/50; H05B33/02; H05B33/10
Domestic Patent References:
| JP2007012917A | ||||
| JP2004327728A | ||||
| JP2011165788A | ||||
| JP2008257710A | ||||
| JP2007013127A |
Foreign References:
| WO2013103093A1 |