Title:
半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP6728638
Kind Code:
B2
Abstract:
To improve accuracy and shielding capabilities of impurity implantation, a method of manufacturing a semiconductor device is provided, the method including forming a first photoresist on a front surface of a semiconductor substrate, the front surface being provided with a front surface structure, forming, on the first photoresist or below a rear surface of the semiconductor substrate, a second photoresist having opposite photo-curing properties from those of the first photoresist, and implanting impurities into the semiconductor substrate using as a mask the second photoresist, which has been subjected to patterning.
Inventors:
Keiko Kajiwara
Application Number:
JP2015220664A
Publication Date:
July 22, 2020
Filing Date:
November 10, 2015
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/266; G03F7/20; H01L21/027; H01L21/336; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| JP58107630A | ||||
| JP10163478A | ||||
| JP59150475A | ||||
| JP10064841A | ||||
| JP61264723A | ||||
| JP1293635A | ||||
| JP2001297997A | ||||
| JP2015008235A |
Foreign References:
| WO2012042653A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation