Title:
窒化物結晶基板の製造方法
Document Type and Number:
Japanese Patent JP6731590
Kind Code:
B2
Abstract:
A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.
More Like This:
Inventors:
Yusuke Mori
Masashi Yoshimura
Completed now
Masayuki Imanishi
Masachi Shibata
Takehiro Yoshida
Masashi Yoshimura
Completed now
Masayuki Imanishi
Masachi Shibata
Takehiro Yoshida
Application Number:
JP2016092450A
Publication Date:
July 29, 2020
Filing Date:
May 02, 2016
Export Citation:
Assignee:
National University Corporation Osaka University
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
International Classes:
C30B29/38; C30B25/20
Domestic Patent References:
| JP2011026181A | ||||
| JP2012006772A | ||||
| JP2015224143A |
Foreign References:
| WO2011155341A1 | ||||
| WO2009096125A1 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Hiromi Abe
Hideo Tachibana
Masahiro Shiratori
Hiromi Abe
Hideo Tachibana
Masahiro Shiratori