Title:
半導体装置
Document Type and Number:
Japanese Patent JP6743315
Kind Code:
B2
Abstract:
An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.
Inventors:
Shunpei Yamazaki
Jun Koyama
Imai Kataro
Jun Koyama
Imai Kataro
Application Number:
JP2020045429A
Publication Date:
August 19, 2020
Filing Date:
March 16, 2020
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/768; H01L21/8234; H01L27/088
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