Title:
半導体装置
Document Type and Number:
Japanese Patent JP6750668
Kind Code:
B2
Abstract:
First and second p-type anode layers (2,3) are provided side by side on a drift layer (1). N-type cathode layer (5) and p-type cathode layer (6) are provided side by side below the drift layer (1). An n-type buffer layer (7) is provided between the drift layer (1) and the n-type cathode layer (5) and between the drift layer (1) and the p-type cathode layer (6). The first p-type anode layer (2,2a,2b) has a greater diffusion depth than a diffusion depth of the second p-type anode layer (3). The first p-type anode layer (2,2a,2b) has a greater impurity concentration than an impurity concentration of the second p-type anode layer (3). The n-type cathode layer (5) has a greater diffusion depth than a diffusion depth of the p-type cathode layer (6). The n-type cathode layer (5) has a greater impurity concentration than an impurity concentration of the p-type cathode layer (6).
Inventors:
Fumihito Masuoka
Application Number:
JP2018502874A
Publication Date:
September 02, 2020
Filing Date:
February 29, 2016
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/861; H01L29/868
Domestic Patent References:
| JP10093113A | ||||
| JP2014053451A | ||||
| JP56037683A | ||||
| JP2013235890A | ||||
| JP2016015392A |
Foreign References:
| WO2014199465A1 |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno